Beschreibung
The focal point of the study at hand is the development of GaN-HFETs suitable for ISM applications. In this connection, the thesis focuses on the development and scientific characterization of GaN-based high voltage HFETs for the HF and VHF frequency range. In addition to the fundamental development of a detailed large-signal model, the assembly impact has been analyzed in-depth and optimized for switch-mode operation.
