Beschreibung
The 38th Annual Denver Conference on Applications of X-Ray Analysis was held July 31 - August 4, 1989, at the Sheraton Denver Technical Center, Denver, Colorado. The conference alternates emphasis between x-ray diffraction and x-ray fluorescence, and this being an odd year the emphasis was on diffraction. Thus the Plenary Session was slanted toward diffraction in general and thin film analysis in particular. The Plenary Session on x-ray analysis of thin films did not just happen this year but really began four years ago with Paul Predecki suggesting a special session devoted to thin film techniques. The session generated a great deal of interest, so Paul suggested that a workshop on thin films should be slated for the 1987 conference. A full day was devoted to the workshop, which was split into a half day on epitaxial thin films and the other half day on polycrystalline thin films. The workshop attendance indicated a great deal of interest in this topic, leading to this year's Plenary Session. The first two speakers of the Plenary Session (B. Tanner and K. Bowen) have been key throughout the thin film activities. They were invited speakers for the 1985 special session on thin films and instructors for the 1987 workshop on epitaxial thin films.
Autorenportrait
InhaltsangabeI. Characterization of Epitaxial Thin Films and Crystal Defects by X-Ray Diffraction.- High Resolution X-Ray Diffraction for the Characterization of Semiconducting Materials.- X-Ray Topography of Surface Layers and Epitaxial Films.- Stresses in Thin Films.- Deformation, Recovery and Stress Corrosion Cracking of Nickel-Base Alloy 600 by X-Ray Rocking-Curve Measurements.- X-Ray Characterisation of Residual Surface Strains after Polishing of Silicon Wafers.- Measurement of Relaxation in Strained Layer Semiconductor Structures.- Characterization of Structural Inhomogeneities in GaAs/AlGaAs Superlattices.- X-Ray Diffraction Analysis of SiGe/Si Superlattices.- High Resolution Measurement of Surface Misorientation in Single Crystal Wafers.- II. XRD Characterization of Polycrystalline Thin Films.- Surface and Ultra-Thin Film Characterization by Grazing-Incidence Asymmetric Bragg Diffraction.- Study of Thin Films and Multilayers using Energy-Dispersive Diffraction of Synchrotron Radiation.- Effects of Refraction and Reflection on Analysis of Thin Films by the Grazing-Incidence X-Ray Diffraction Method.- Enhanced Range of Measurable Thickness of Thin Crystalline Layers Using ?/2? Decoupled Powder X-Ray Diffraction.- X-Ray Diffraction of Plasma Nitrided Ti-6A1-4V.- A Comparative Study of Stress Determination Techniques in Polycrystalline Thin Films.- X-Ray Line Broadening Analysis of T1-Superconducting Films.- Stress Analysis of Thin-Film SmS using a Seemann-Bohlin Diffractometer.- Residual Stresses and Differential Deformation of Electroplated Structures.- X-Ray Residual Stress Analysis of Zn-Ni Alloy Electroplating Layers.- XRD Characterization of Titanium/Copper Thin Films Heat Treated in Vacuum and Hydrogen.- III. X-Ray Spectrometric Characterization of Thin Films.- Characterization of Thin Films Using XRF.- The Determination of Elemental Composition, Thickness and Crystalline Phases in Single and Multi-Layer Thin Films.- Near-Surface Chemical Characterization Using Grazing Incidence X-Ray Fluorescence.- Basic Studies of Multi-Layer Thin Film Analysis Using Fundamental Parameter Method.- Application of Multi-Layer Thin Film Analysis by X-Ray Spectrometry Using the Fundamental Parameter Method.- Fundamental Parameter-Based X-Ray Fluorescence Analysis of Thin and Multilayer Samples.- Non-Destructive Chemical-State Analysis of Thin Films and Surface Layers (1-1000 nm) by Low-Energy Electron-Induced X-Ray Spectroscopy (LEEIXS).- IV. Analysis of Digital Diffraction Data Including Rietveld.- Structure Refinements in Chemistry and Physics. A Comparative Study Using the Rietveld and the Two-Step Method.- X-Ray Powder Diffraction QPA by Rietveld Pattern-Fitting - Scope and Limitations.- Application of Position Sensitive Detectors for Neutron Diffraction Texture Analysis of Hematite Ore.- Problems in the Derivation of d-Values from Experimental Digital XRD Patterns.- Derivation of d-Values from Digitized X-Ray and Synchrotron Diffraction Data.- The Optimization of Step Size While Collecting a Digitized Diffraction Pattern at a Constant Total Scan Time.- XRD Acquisition Parameters for Detection of Weak Peaks.- V. X-Ray Stress Analysis.- X-Ray Examination of Fracture Surfaces of Silicon Nitride Ceramics.- X-Ray Residual Stress Measurement on Fracture Surface of Stress Corrosion Cracking.- Time-Resolved X-Ray Stress Measurement During Cyclic Loading.- Determination of Rolling Contact Stress Distribution by X-Ray Diffraction.- Residual Stress Distribution of Ceramic-Metal Joint.- Diffraction Plane Dependence of X-Ray Elastic Constants of Alumina.- VI. Determination of Crystallite Size and Strain.- The Importance of Consistent 1/d Scans in Determining Size and Strain by Powder Diffraction Profile Analysis.- The Comparison of Several Standard Materials and Techniques for the Warren-Averbach Determination of Microstructure Characteristics of Calcium Hydroxide Sorbent Materials.- The Use of 2-D Detector Utilizing Laser-Stimulated Luminescence for X-R
